Official Bihar Engineering University examination question papers, marks distribution, and questions transcript. Available exam sessions: 2024, 2023.
Open BEU Connect Android app to solve any numerical or derive formulas step by step.
No paper transcript available.
Official BEU curriculum units & topics for this examination subject.
Unit 1.0: Basics Of Semiconductor Physics
Semiconductor Carrier Modelling- Bonding Model • Energy Band Model • Carriers • Band Gap • Carrier Properties (Effective Mass, Intrinsic Carrier Concentration, Doping) • Density Of States • Fermi Function • Equilibrium Carrier Concentration (Formula For N And P And NP Product) • Charge Neutrality Relationship • Determination Of Fermi Level • Carrier Concentration • Temperature Dependence • Carrier Action - Drift • Mobility • Drift Current • Resistivity • Diffusion Current • Total Current • Relation Between The Diffusion Constants And Mobility (Einstein's Relationship) • Recombination-Generation (Band-To-Band, R-G Centres, Auger, Impact Ionization) • Equation Of State • Continuity Equation • Minority Carrier Diffusion Equation
Unit 2.0: PN Junction Diode
Step Junction • Built-In Potential • Depletion Width • Depletion Approximation • Electrostatic Relationship (Charge Density, Depletion Width, Potential, Electric Field) For Va = 0, Va I 0 And Va I 0 • Ideal Diode Equation (Qualitative And Quantitative Derivation: Band Model, Assumptions, Approximation, Boundary Condition) • Deviation From Ideal (R-G Current, Series Resistance, High Level Injection) • Junction Breakdown (Avalanche And Zener) • Reverse Bias Junction Capacitance • Forward Bias Diffusion Capacitance • Qualitative Understanding Of Turn On And Turn-Off Transients • Zener Diode • Tunnel Diode • Varactor Diode • Schottky Diode
Unit 3.0: Physics And Technologies Of BJT
Operational Considerations • Modes And Configurations • Performance Parameters (Emitter Efficiency, Base Transport Factor, Common Base Current Gain, Common Emitter Current Gain And Their Derivation For An Ideal Transistor • Deviation From Ideal (Base Width Modulation Punch Through, Avalanche Breakdown, Geometrical Effects, R-G Current) • Small Signal Modelling
Unit 4.0: Physics And Technologies Of FET
JUNCTION FET (Theory Of Operation, I-V Relationship) • MOS CAPACITOR (Energy Band Diagram, Gate-Voltage Relationship, Capacitance-Voltage Characteristics) • MOSFET (Theory Of Operation, Threshold Voltage, I-V Characteristics) • NON IDEAL MOS (M-S Work Function Difference, Oxide Charges, Threshold Adjustment And Considerations)
Unit 5.0: Introduction To UJT, SCR, Triac And Diac
UJT, SCR, Triac And Diac (Construction, Working, Characteristics And Application) • UJT Relaxation Oscillator